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Vol.6 , No. 1, Publication Date: Apr. 9, 2019, Page: 1-10
 and solution growth technique. The deposited alloyed samples of A<sub>24</sub> and A<SUB>25</SUB> were annealed at 200°C and 250°C respectively using Master Chef Annealing Machine. The structural properties and morphology of the samples were done using X-ray diffractometer (XRD) and scanning electron microscope (SEM) respectively. The XRD pattern of ZnO:SnO<sub>2</sub> alloyed thin films of sample A<SUB>24</SUB> has two diffraction peaks at 2θ = 19.522° and 22.811°, which indicates the crystalline nature of the alloyed thin films. The grain sizes were found to be 40.522nm and 92.41nm. Rutherford backscattering Spectroscopy (RBS) analysis confirmed the percentage of the elements of Zn, Sn and O in the alloyed thin films. The alloyed thin films of samples A<SUB>24</SUB> and A<SUB>25</SUB> ZnO:SnO<sub>2</sub> show optical transmittance of 42%-58% in the ultraviolet region, 60%-61% in the visible, and 62%-58% in the near-infrared regions of electromagnetic spectrum for sample A<SUB>24</SUB> annealed at 200°C. Sample A<SUB>25</SUB> annealed at 150°C has an optical transmittance of 59% -62% in the ultraviolet region, 62%-65% in the visible and 65%-68% in the near infrared regions of electromagnetic spectrum. The two samples, have equal direct wideband gap of 3.34±0.05eV. Other properties that were investigated are; absorbance, reflectance absorption coefficient, extinction coefficient, refractive index, optical conductivity, and dielectric constants. These compound alloyed thin films may be found useful in heat mirror applications, galvanization, active layer in various types of solar cells and passive layer in solar-selective surfaces, and are also found interesting as semiconductor materials for opto-electronic applications.&picture=http://www.aascit.org/aascit/decorators/img/journal/916.jpg)
| [1] | Joseph Ijeoma Onwuemeka, Department of Physics, Imo State University, Owerri, Nigeria. |
| [2] | Azubuike Josiah Ekpunobi, Departmentof Physics, Nnamdi Azikiwe University, Awka, Nigeria. |
| [3] | Peter Ifeanyi Ekwo, Departmentof Physics, Nnamdi Azikiwe University, Awka, Nigeria. |
The synthesis of ZnO:SnO2, alloyed thin films have been prepared on glass substrates under the elevated temperature of 60°C of NaOH solution, using two solution based methods: successive ionic layer adsorption and reaction (SILAR) and solution growth technique. The deposited alloyed samples of A24 and A25 were annealed at 200°C and 250°C respectively using Master Chef Annealing Machine. The structural properties and morphology of the samples were done using X-ray diffractometer (XRD) and scanning electron microscope (SEM) respectively. The XRD pattern of ZnO:SnO2 alloyed thin films of sample A24 has two diffraction peaks at 2θ = 19.522° and 22.811°, which indicates the crystalline nature of the alloyed thin films. The grain sizes were found to be 40.522nm and 92.41nm. Rutherford backscattering Spectroscopy (RBS) analysis confirmed the percentage of the elements of Zn, Sn and O in the alloyed thin films. The alloyed thin films of samples A24 and A25 ZnO:SnO2 show optical transmittance of 42%-58% in the ultraviolet region, 60%-61% in the visible, and 62%-58% in the near-infrared regions of electromagnetic spectrum for sample A24 annealed at 200°C. Sample A25 annealed at 150°C has an optical transmittance of 59% -62% in the ultraviolet region, 62%-65% in the visible and 65%-68% in the near infrared regions of electromagnetic spectrum. The two samples, have equal direct wideband gap of 3.34±0.05eV. Other properties that were investigated are; absorbance, reflectance absorption coefficient, extinction coefficient, refractive index, optical conductivity, and dielectric constants. These compound alloyed thin films may be found useful in heat mirror applications, galvanization, active layer in various types of solar cells and passive layer in solar-selective surfaces, and are also found interesting as semiconductor materials for opto-electronic applications.
Keywords
Absorbance, Reflectance, Absorption Coefficient, Extinction Coefficient, Refractive Index, Optical Conductivity
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