ISSN: 2375-3919
American Journal of Materials Research  
Manuscript Information
 
 
Excitonic Polaritons and Electronic Band Structure of CdAl2S4 Single Crystals
American Journal of Materials Research
Vol.4 , No. 2, Publication Date: Aug. 8, 2017, Page: 7-14
849 Views Since August 8, 2017, 616 Downloads Since Aug. 8, 2017
 
 
Authors
 
[1]    

Nicolae Syrbu, Department of Telecommunication, Technical University of Moldova, Chisinau, Republic of Moldova.

[2]    

Victor Zalamai, Laboratory of Materials for Photovoltaics and Photonics, Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova.

[3]    

Valerian Dorogan, Department of Telecommunication, Technical University of Moldova, Chisinau, Republic of Moldova.

 
Abstract
 

Reflection and wavelength modulated reflection spectra were investigated at temperature 10 K in CdAl2S4 crystals. Ground and excited states of three excitonic series (A, B and C) were found out. Contours of excitonic reflection spectra were calculated and main parameters of excitons and bands in k = 0 were determined. The effective mass of electrons mc is equal to 0.30m0 and holes masses mv1, mv2 and mv3 are equal to 1.55m0, 0.90m0 and 2.07m0, respectively in Γ point of Brillouin zone. Valence bands V1 - V2 splitting due to crystal field (141 meV) and bands V2 - V3 splitting by spin-orbital interaction (152 meV) were estimated. Spectral dependences of optical functions (n, k, ε1 and ε2) were determined by Kramers-Kronig analysis of reflection spectra measured at energies 3 - 6 eV and in Ec and E||c polarizations. Energies of direct electron transitions were determined and identified in the actual points of Brillouin zone in the framework of actual band structure theoretical calculations of CdAl2S4.


Keywords
 

Excitons, Electron and Hole Effective Masses, Birefractive Effects, Isotropic Wavelength, Kramers-Kronig Analysis


Reference
 
[01]    

Ju. O. Derid, S. I. Radautsan, I. M. Tiginyanu, Multicomponent chalcogenides AIIB2IIIC4VI, Kishinev, Stiinta, (1990) 4.

[02]    

S. I. Radautzan, N. N. Syrbu, I. I. Nebola, V. G. Tyrziu, D. M. Berca, Energy band structure and two-phonon absorption in crystals CdGa2S4 and CdGa2Se4, Semiconductors, 11 (1977) 69-74.

[03]    

H. Neuman, W. Horig, G. Nooke, N. N. Syrbu, The fundamental absorption edge of PbGa2S4, Solid State Communications, 65 (2) (1988) 155.

[04]    

H. Neuman, H. Sobotta, N. N. Syrbu, S. I. Radautsan, V. Riede, Vibrational properties of CdGa2S4, Crystal Res. &Technol. , 19 (5) (1984) 709-714.

[05]    

R. Bacewiezt, P. P. Lottici, R. Razetti, Solid State Physics, 12 (1979) 3603.

[06]    

N. N. Syrbu, V. E. Tezlevan, V. I. Perchekli, Effect of ordered vacancies on vibrational Raman spectra of CdGa2S4 crystals, Optics and Spectroscopy, 75 (2) (1993) 355-359.

[07]    

N. N. Syrbu, V. T. Tezlevan, Energetic band-structure and optical spectra of CdGa2Se4, CdGa2S4 and CdAl2S4 crystals, Physica B Condensed matter, 210 (1) (1995) 43-48.

[08]    

N. N. Syrbu, L. L. Nemerenco, V. Z. Cebotari, Vibrational and polariton spectra of CdGa2S4 and CdAl2S4 crystals, Crystal Res. &Technol. , 37 (1) (2002) 101-110.

[09]    

D. Erandonea, R. S. Kumar, F. J. Manjon, V. V. Ursaki, I. M. Tiginyanu, High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4, Journal of Applied Physics, 104 (6) (2008) 063524.

[10]    

L. M. Suslicov, Z. P. Gol’dmasi, I. F. Kopinet, V. Ju. Slivka, Optics and Spectroscopy, 51 (1981) 307.

[11]    

Ju. V. Vorosilov, V. Ju. Slivka, Anoxidic materials for electronics, L’vov, Visshaia Shkola, (1989) 123.

[12]    

A. N. Georgobiani, Yu. V. Ozerov, S. I. Radautsan, I. M. Tiginyanu, Investigation of fundamental optical transitions in CdGa2S4 by methods of modulation spectroscopy, Sov. Phys. – Solid State (USA), 23 (1981) 1221-1226.

[13]    

M. E. Doroshenko, T. T. Basiev, V. V. Osiko, V. V. Badikov, D. V. Badikov, H. Jelinkova, P. Koranda, J. Sulc, Oscillation properties of dysprosium-doped lead thiogallate crystal, Optic Letters, 34 (5) (2009) 590-592.

[14]    

Yu. V. Orlovskii, T. T. Basiev, L. N. Dmitruk, V. V. Osiko, D. V Badikov, V. V. Badikov, S. B. Mirov, Mid- IR Laser Transitions in Nd3+ Doped CaGa2S4, PbGa2S4, and PbCl2 Laser Crystals, CLEO/QELS, Baltimore, Maryland, USA, 2, (2005) 877.

[15]    

E. L. Ivcenco, A. V. Selikin, JETF, 76 (1979) 1837.

[16]    

K. Suresh, N. V. Poornachandra Rao, K. V. R. Murthy, UV-Visible Excitable Luminescent Properties of CaAl2S4: Eu2+ Phosphor, International Journal of Luminescence and Applications, 5 (1) (2015) 149-153.

[17]    

N. N. Syrbu, V. V. Ursaki, Exciton Polariton Dispersion in Multinary Compounds, in Exciton Quasiparticles: Theory, Dynamics and Applications, Randy M. Bergin (Editor), Nova Science Publishers Inc. , 2010 USA.

[18]    

T. G. Kerimova, S. C. Mamadov, I. A. Mamedov, Deformation potentials of band extrema Γ (000) in CdGa2S4, Semiconductors, 32 (2) (1998) 148-150.

[19]    

N. N. Syrbu, V. Z. Cebotari, Davydov multiplets in vibrational spectra of PbGa2S4 and MgGa2S4 crystals, Journal of physics. Condensed matter, 10 (15) (1998) 3467-3477.

[20]    

N. N. Syrbu, V. E. L’vin, I. B. Zadnipru, V. M. Golovei, Raman and infrared vibration spectra of PbGa2S4 crystals, Semiconductors, 25 (10) (1991) 1721-1730.

[21]    

N. N. Syrbu, V. I. Parvan, V. V. Ursaki, Optical Materials, 34 (2012) 691.

[22]    

V. L. Panaiutin, B. E. Ponedelnikov, A. E. Rozenson, V. I. Chijikov, Band structure of semiconductors with cadmium thiogallate lattice, Izv. Vuzov SSSR, Fizika, 8 (1979) 57-64. (in Russian).

[23]    

V. L. Panaiutin, B. E. Ponedelnikov, A. E. Rozenson, V. I. Chijikov, Band structure of zinc thiogallate and selengallate, Semiconductors, 15 (2) (1981) 311-315.

[24]    

X. Jiang, W. R. L. Lambrecht, Electronic band structure of ordered vacancy defect chalcopyrite compounds with formula II−III2−VI4, Physical Review B, 69 (3) (2004) 0352011.





 
  Join Us
 
  Join as Reviewer
 
  Join Editorial Board
 
share:
 
 
Submission
 
 
Membership