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Vol.4 , No. 5, Publication Date: Aug. 31, 2017, Page: 28-33
 near-band-edge photoluminescence spectrum of a thin fine-grained (<i>h, d<sub>cr</sub>≤1 μm</i>) polycrystalline CdTe layer in an n-CdS/p-CdTe film heterostructure subjected to frontal excitation by an Ar<sup>+</sup> laser with an intensity of ~44 W/cm<sup>2</sup> consists of a dominant intrinsic (<i>e-h</i>) emission band with a half-width <i>Δ<sub>A</sub>=10-12 meV</i> and a blue shift <i>ΔE<sub>r</sub>≈25 meV</i> of the red edge with respect to E<sub>g</sub>, its <i>LO+nLA</i> phonon replica (<i>Δ<sub>B</sub>≈40 meV</i>) with a weak doublet structure, and a wide (<i>Δ<sub>D</sub>≈100 meV</i>) surface-interface luminescence band peaking at a frequency <i>ħω≈1.49 eV</i>. Rear-side illumination of the photoresistive CdS layer in the intrinsic absorption range with an intensity L<sub>ill</sub>≈5.10<sup>2</sup> lx almost completely destroys the <i>e-h</i> band and all related luminescence lines, which are replaced with an asymmetric polariton emission doublet having an exciton resonance frequency <i>ħω≈1.59 eV</i> (<i>Δ<sub>ex</sub>≈25 meV</i>) and a wide line of shallow donor–acceptor pairs (<i>Δ<sub>DAP</sub>≈40 meV</i>) at a frequency of ħω≈1.54 eV, whose maximum intensity is almost two orders of magnitude lower than that of the A line in the absence of illumination.&picture=http://www.aascit.org/aascit/decorators/img/journal/909.jpg)
| [1] | Bozorboy Joboralievich Akhmadaliev, Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan. |
| [2] | Olmos Muhammaddovidovich Mamatov, Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan. |
| [3] | Bakhtiyor Zaylobidinovich Polvonov, Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan. |
| [4] | Nosirjon Khaydarovich Yuldashev, Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan. |
The low-temperature (4.2 K) near-band-edge photoluminescence spectrum of a thin fine-grained (h, dcr≤1 μm) polycrystalline CdTe layer in an n-CdS/p-CdTe film heterostructure subjected to frontal excitation by an Ar+ laser with an intensity of ~44 W/cm2 consists of a dominant intrinsic (e-h) emission band with a half-width ΔA=10-12 meV and a blue shift ΔEr≈25 meV of the red edge with respect to Eg, its LO+nLA phonon replica (ΔB≈40 meV) with a weak doublet structure, and a wide (ΔD≈100 meV) surface-interface luminescence band peaking at a frequency ħω≈1.49 eV. Rear-side illumination of the photoresistive CdS layer in the intrinsic absorption range with an intensity Lill≈5.102 lx almost completely destroys the e-h band and all related luminescence lines, which are replaced with an asymmetric polariton emission doublet having an exciton resonance frequency ħω≈1.59 eV (Δex≈25 meV) and a wide line of shallow donor–acceptor pairs (ΔDAP≈40 meV) at a frequency of ħω≈1.54 eV, whose maximum intensity is almost two orders of magnitude lower than that of the A line in the absence of illumination.
Keywords
Fine-Grained Polycrystalline CdTe Film, Photoresistor, n-CdS/p-CdTe Heterostructure, Low-Temperature Photoluminescence, Exciton–Polariton Emission, Donor–Acceptor Pair
Reference
| [01] | M. Tuteja, P. Koirala, J. Soares, R. Collins, A. Rockett. Low temperature photoluminescence spectroscopy studies on sputter deposited CdS/CdTe junction and solar cells Journal of Materials Research, (2016) Vol.31, Issue 02, pp. 186-194. |
| [02] | K. Durose, S. E. Asher, W. Gaegermann, D. Levi and etal. Physical Characterization of Thin-film Solar Cells. Journal: Progress in Photovoltaics Research and Applications, (2004) Issue 2-3. Vol. 12, pp. 177-217. |
| [03] | I. Caraman, S. Vatavu, G. Rusu, P. Gasin. The luminescence of CdS and CdTe thin films, components of photovoltaic cells. Chalcogenide Letters, (2006) Vol. 3, No.1, January, pp. 1-7. |
| [04] | Sh. J. Ikhmayies, R. N. Ahmad-Bitar. Interface photoluminescence of the SnO2:F/CdS:In/CdTe thin film solar cells prepared partially by the spray pyrolysis technique. Journal of Luminescence, (2012) Vol.132, Is.2, pp. 502–506. |
| [05] | T. Okamoto, Y. Matsuzaki, N. Amin, et al. Characterization of highly efficient CdTe thin film solar cells by low-temperature photoluminescence. Japanese Journal of Applied Physics. 31 Jan., (1998, Phys.) Pt 1, vol: 37, num: 7, pp.3894-3899, published: JP. |
| [06] | K. Nakamura, M. Gotoh, T. Fujihara, T. Toyama and et al. Electromodulated Photoluminescence Study of CdS/CdTe Thin-Film Solar Cell. Japanese Journal of Applied Physics, (2001) Vol. 40, pp. 4508-4511. |
| [07] | M. D. Potter, D. P. Halliday, M. Cousins, K. DuroseA study of the effects of varying cadmium chloride treatment on the luminescent properties of CdTe/CdS thin film solar cells. Thin Solid Films, (2000)Vol.361–362, pp. 248–252. |
| [08] | Kosyachenko L. А., Savchuk А. I., Grushko Е. V. Influence of a thickness of an absorbing layer on efficiency of solar cells. Semiconductors, (2009) Vol. 43, No. 8, pp. 1060-1064. |
| [09] | Il’chuk G. A., Kus’nej V. V., Rud’ V. Yu., Rud’ Yu. V., Shapoval P. Y., Petrus’ R. Y. Photosensitivity of heterotransitions received by chemical superficial sedimentation. Semiconductors, (2010) Vol. 44, No. 3, pp. 335-337. |
| [10] | Tuteja M. Low temperature photoluminescence studies on sputter deposited cadmium sulphide/cadmium tellurideheterojunctions and solar sells./ Thesis. University of Illinois at Urbana-Champaing, (2014). P. 24. |
| [11] | B. J. Akhmadaliev, O. M. Mamatov, B. Z. Polvonov, N. Kh. Yuldashev. Correlation Between the Low-Temperature Photoluminescence Spectra and Photovoltaic Properties of Thin Polycrystalline CdTe Films. JAMP (USA), (2016)Vol. 4, No. 2, pp.391-397. |
| [12] | B. J. Akhmadaliev, B. Z. Polvonov, N. Kh. Yuldashev. Influence of Exciton Decay on the Polariton Luminescence Spectra of CdTe Crystal. Optics and Spectroscopy, (2014) Vol. 116, No. 2, pp. 244–248. |
| [13] | Ushakov V. V., Klevkov Yu. V., Dravin V. A. Ion implantationEr in polycrystallinecadmium telluride. Semiconductors, (2015) Vol.49, No. 5, pp.644-647. |
| [14] | Bagaev, V. S., Klevlov, Yu. V., Kolosov, S. A., Krivobok, V. S., Shepeli, A. A. Optical and electrophysical properties of defects in high-purity CdTe. Physics of the Solid State, (2010) Vol.52, No.1, pp.37-42. |
| [15] | Romanovsky S. О., Sel’kin А. V., Stamov I. G., Feoktistov N. А. Excitons in crystals ZnP2 at barrier Shottki of electrical field. Physics of the Solid State, (1998) Vol.40, No.5, pp. 884-885. |
| [16] | Polvonov B. Z., Yuldashev N. K. The photo voltage film p-CdTe with the photo responsive- |
| [17] | Operated substrate n-CdS The Third European Conference on Physics and Mathematics,12 th September, 2015. Section 3 (Physics). Vienna, Austria. PP.12-19. |
| [18] | Panosyan J. R. Radiative recombination in crystals of cadmium telluride. The collection of works Physical Institute RAS (1973), 68, pp.147-202. |
