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International Journal of Modern Physics and Application

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Temperature Dependence of Debye-Waller Factors of Constituent Elements in Semiconductor Compounds

International Journal of Modern Physics and Application
Vol.3 , No. 6, Publication Date: Sep. 29, 2016, Page: 70-74

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Authors

[1]	Nguyen Van Hung, Department of Physics, Hanoi University of Science. 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam.
[2]	Ha Dang Khoa, School of Engineering Physics, Hanoi University of Science and Technology, Hanoi, Vietnam.

Abstract

In this work, temperature dependence of Debye-Waller factors (DWFs) of constituent elements in semiconductor compounds have been studied. The DWFs are presented by the mean square displacement (MSD) which has close relation with the mean square relative displacement (MSRD). Their analytical expressions have been derived based on statistical moment method and empirical many-body Stillinger-Weber potentials. Numerical results for the MSDs of constituent elements in GaAs, GaP, InP, InSb having zinc-blende structure are found to be in reasonable agreement with experiment and with those of other theories. They show that the MSD describing thermodynamic properties of a semiconductor element becomes different when it is mixed with different other semiconductor elements to be compounds.

Keywords

Temperature Dependence, Debye-Waller Factor, Statistical Moment Method, Stillinger-Weber Potential, Semiconductor Compound

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