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International Journal of Modern Physics and Application

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The Effect of Pressure and Band Gap Theoretical Study in N-doped TiO₂ Nanoparticles

International Journal of Modern Physics and Application
Vol.2 , No. 6, Publication Date: Dec. 11, 2015, Page: 105-109

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Authors

[1]	Xin Wang, Department of Applied Chemistry, East University of Heilongjiang, Harbin, P. R. China; Department of Applied Chemistry, Harbin Institute of Technology, Harbin, P. R. China.
[2]	Hongkun Zhang, Department of Applied Chemistry, East University of Heilongjiang, Harbin, P. R. China.
[3]	Tao Jiang, Department of Applied Chemistry, East University of Heilongjiang, Harbin, P. R. China.
[4]	Yanan Li, Department of Applied Chemistry, East University of Heilongjiang, Harbin, P. R. China.
[5]	Liangsheng Qiang, Department of Applied Chemistry, Harbin Institute of Technology, Harbin, P. R. China.

Abstract

As part of our efforts to find a way to control the concentration of N-doped TiO₂, TiN_xO_y powers are prepared by a device of our own design. Nanomaterials are generated using N-doped TiO₂ material with their concentrations by adjusting the amount of NH3 under middle pressure. N-doped TiO₂ particles are characterized under the reaction conditions at different middle pressure. Experimental results indicate that the band gap of semiconductor has been narrowed by increasing of the concentration of N-doped TiO₂. It can therefore be concluded that the synthesis route we found through this study is an effective way to adjust the relationships between the concentration and the band gap of the N-doped TiO₂ nanomaterials.

Keywords

N-doped, Band Gap, Photoelectrical Properties, Nanoparticle

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