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International Journal of Modern Physics and Application

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Characterization of the Metal Insulator Transition in Thin Ni_x Si_1-x Films

International Journal of Modern Physics and Application
Vol.2 , No. 6, Publication Date: Nov. 10, 2015, Page: 100-104

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Authors

[1]	M. Errai, Physics Department, Faculty of Sciences, Ibn Zohr University, Agadir, Morocco.
[2]	A. El kaaouachi, Physics Department, Faculty of Sciences, Ibn Zohr University, Agadir, Morocco.
[3]	H. El idrissi, Laboratory EEA & TI, Faculty of Sciences and Technology of Mohammedia, Mohammedia, Morocco.
[4]	Chi-Te Liang, Department of Physics, National Taiwan University, Taipei, Taiwan.

Abstract

In R. Rosenbaum, A. Heines, A. Palevski, M. Karpovski, A. Gladkikh, M. Pilosof, A. J. Daneshvar, M. R. Graham, T. Wright, J. T. Nicholls, C. J. Adkins, M. Witcomb, V. Prosesky, W. Przybylowicz, R. Preterious, J. Phys.: Condens. Matter. 9, 5395–5411 (1997), the authors have observed a metal-insulator transition in films Si_1-xNi_x at x_c=0.24 and observed WL and EEI phenomena at low temperatures. Using results obtained on these films we have performed calculations using Boltzmann’ theory and weak localization theory near the MIT. Our new results show that Ioffe-Regel criterion is obeyed and the conduction is governed by weak localization and electron - electron interactions phenomena, in agreement with the results obtained by Rosenbaum et al.

Keywords

Amorphous Alloys a-Si_1-xNi_x, Weak Localization, Electron-Electron Interactions, Metal Insulator Transition

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